Dr. XIAODONG HU

中文版

• Office: Room North 442， Physics Building
• Phone: (86) 10 6276-7621
• Fax: (86) 10 6275-1615
• Email: huxd@pku.edu.cn
• Title: Professor
• Research Interests: III-nitride semiconductors (AlN, GaN, InN and their alloys) growth and characterization, Laser diode, solid-state lighting and Nanophotonics.

Education:

• University of Electronic Science and Technology of China, Physics and Photoelectronics, Ph.D. 1992
• Tsinghua University, Optics, M. S. 1989
• Peking University, China, Physics, B. S. 1982

Experience:

• Professor of Physics, Peking University (2005-present)
• Associate Researcher, Kansas State University (2000-2001)
• Research Fellow, University of Texas at Austin (1998-2000)
• Assistant Professor of Physics, Peking University (1995-2005)
• Postdoctor, Tsinghua University (1993-1995)

Recent Publications:

1. Wei Yang and Xiaodong Hu，Comment on ‘‘Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films’’, 107, 159701 (2011) , Physical Review Letters
2. Lei Wang, Cimang Lu, Jianing Lu, Lei Liu, Ningyang Liu, Yujie Chen, Yanfeng Zhang, Erdan Gu, and Xiaodong Hu*, Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes，18 July 2011，Vol. 19, No. 15 / Optics Express 14182
3. Lei Liu, Lei Wang, Ding Li, Ningyang Liu, Weihua Chen, ZheChuan Feng, Weimin Du and Xiaodong Hu*, Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures，Journal of Applied Physics, 109 073106 (2011)
4. Wang Yu-Zhou, Li Ding, Li Lei, Liu Ningyang, Liu Lei, Cao Wen-Yu, Chen Wei-Hua, and Xiaodong Hu*, Intersubband transitions in Al0.82In0.18N/GaN single quantum well,, Chin. Phys. B, Vol.20, No. 9 (2011) 094207
5. Lei Wang, Rui Li, Ding Li, Ningyang Liu, Lei Liu, Weihua Chen, Cunda Wang, Zhijian Yang, and Xiaodong Hu, Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer, Applied Physics Letters, 96(06)061110, 2010
6. Ziwen Yang, Rui Li, Tao Yu, Yanzhao Zhang, Weihua Chen, Xiaodong Hu*, Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field, Applied Physics Letters, 94(6), 061120 (2009)
7. Li, R; Zhang, JM; Chen, L; Zhao, HB; Yang, ZW; Yu, T; Li, D; Liu, ZC; Chen, WH; Yang, ZJ; Zhang, GY; Gan, ZZ; Hu, XD*; Wei, QY; Li, T; Ponce, FA, Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure, Applied Physics Letters, 94(21)211103, 2009
8. Lei Wang, Rui Li, Ziwen Yang, Ding Li, Tao Yu, Ningyang Liu, Lei Liu, Weihua Chen, and Xiaodong Hu*, High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes, APPLIED PHYSICS LETTERS 95 (21), 211104, 2009
9. D Zhang, Z C Liu and X D Hu* Improved Multi-layer Stopper in the GaN-based Laser Diode, Semicond. Sci. Technol. 24 (2009) 045003 (5pp)
10. W. H. Chen, X. D. Hu,X. D. Shan, X. N. Kang, X. R. Zhou, X. M. Zhang, T. J. Yu, K. Xu, Z. J. Yang, G. Y. Zhang , Shock-assisted superficial hexagonal-to-cubic phase transition in GaN/sapphire interface induced by ultra-violet laser lift-off, Chinese Physics Letters, Vol. 26, 016203 (2009)
11. GAO Ting-Ge, YI Jue-Min, ZHOU Zi-Yao, HU Xiao-Dong* First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride Chinese Physics Letters, 2008, Vol.25, No.8, 2989-2992

Honors and awards:

• Zhengda Prize for Teacher at Peking University, 2006
• Young Teacher Prize at Peking University, 1996.
• Young Teacher Prize at Tsinghua University, 1994