Publications

2016

2015

  • W. Jin, K. Zhang, Z. Gao, Y. Li, L. Yao, Y. Wang, and L. Dai, "CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal–Semiconductor Field-Effect Transistors, and Inverters", ACS applied materials & interfaces (2015).

2014

2013

2012

2011

  • R.-M. Ma, R. F. Oulton, V. J. Sorger, G. Bartal, and X. Zhang, "Room-temperature sub-diffraction-limited plasmon laser by total internal reflection", Nat Mater 10, 110-113 (2011).

  • Y. Dai, P. C. Wu, L. Dai, X. Fang and G. G. Qin, "Hybrid complementary metal-oxide-semiconductor inverters based on single nanowires", Journal of Materials Chemistry 21, 2858 (2011).

  • T. Sun, Z. D. Guo, Y. T. Gu, H. Y. P. Li, G. F. Dong, Z. J. Shi, L. Dai and G. G. Qin, “Mobility increase in poly [2-methoxy-5-(2’-ethylhexyloxy)-1, 4-phenylenevinylene] blended with graphene”, Applied Physics Letters 98, 22302 (2011).

  • T. Sun, P. C. Wu, Z. D. Guo, Y. Dai, H. Meng, X. L. Fang, Z. J. Shi, L. Dai and G. G. Qin, “Synthesis and characterization of Zn3P2/ZnS core/shell nanowires”, Physics Letters A 375, 2118 (2011).

  • Y. Xiao, C. Meng, P. Wang, Y. Ye, H. K. Yu, S. S.Wang, F. X. Gu, L. Dai and L. M.Tong, “Single-nanowire single-mode laser”, Nano letters 11, 1122 (2011).

  • Y. Q. Bie, Z. M. Liao, H. Z. Zhang, G. R. Li, Y. Ye, Y. B. Zhou, J. Xu, Z. X. Qin, L. Dai and D. P. Yu, “Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n Junctions”, Advanced Materials 23, 649 (2011).

  • P. C. Wu, Y. Dai, Y. Ye and L. Dai, “Fast-speed and high-gain photodetectors of individual single crystalline Zn3P2 nanowires”, J. Mater. Chem. 21, 2563 (2011).

  • P. C. Wu, T. Sun, Y. Dai, Y. H. Sun, Y. Ye, L. Dai, “Novel type-II Zn3P2/ZnO core/shell nanowires: synthesis, characteristic, and photoluminescence properties”, Crystal Growth & Design 11, 1417 (2011).

  • Y. H. Sun, Q, Zhao, J. Y. Gao, Y. Ye. W. Wang, R. Zhu, J. Xu, L. Chen, J. Yang, L. Dai, Z. M. Liao and D. P. Yu, “In situ growth, structure characterization, and enhanced photoctalysis of high-quality, single-crystalline ZnTe/ZnO branched nanoheterostructures”, Nanoscale 3, 4418 (2011).

  • Y. Ye, Y. G. Ma, S. Yue, L. Dai, H. Meng, Z. Li, L. M. Tong and G. G. Qin, “Lasing of CdSe/SiO2 nanocables synthesized by the facile chemical vapor deposition method”, Nanoscale 3, 3072 (2011).

  • P. C. W, Y. Dai, T. Sun, Y. Ye, H. Meng, X. L. Fang, B. Yu and L. Dai, “Impurity-dependent photoresponse properties in single CdSe nanobelt photodetectors”, ACS Applied Materials & Interfaces 3, 1859 (2011).

  • Y. Ye, L. Gan, L. Dai, H. Meng, F. Wei, Y. Dai, Z. Shi, B. Yu, X. Guo, and G. G. Qin, "Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes" , J. Mater. Chem. 21, 11760 (2011).

  • Y. Ye, L. Gan, L. Dai, Y. Dai, X. Guo, H. Meng, B. Yu, Z. Shi, and G. G. Qin, "A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells", Nanoscale 3,1477 (2011).

2010

  • T. Sun, Z. L. Wang, Z.J. Shi, G.Z. Ran, W.J. Xu, Z.Y. P. Wang, Y.Z. Li, L. Dai, G. G. Qin. "Multilayered Graphene Used as Anode of Organic Light Emitting Devices". Appl. Phys. Lett. 96, 133301 (2010).

  • R. M. Ma, L. Dai, C. Liu, T. Sun, W. J. Xu and G. G. Gin, “Ultralow-power CMOS inverters constructed on Schottky barrier modified nanowire MOSFETs”, Journal of Nanoscience and Nanotechnology 10, 6428 (2010).

  • Y. Q. Bie, Z. M. Liao, P. W. Wang, Y. B. Zhou, X. B. Han, Y. Ye, Q. Zhao, X. S. Wu, L. Dai, J. Xu L. W. Sang, J. J. Deng, K. Laurent, Y. L. Wang and D. P. Yu, “Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes”, Advanced Materials 22, 4284 (2010).

  • Y. Ye, L. Dai, T. Sun, L. P. You, R. Zhu, J. Y. Gao, R. M. Peng, D. P. Yu and G. G. Qin, “High-quality CdTe nanowires: synthesis, characterization, and application in photoresponse devices”, Journal of Applied Physics 108, 044301, (2010).

  • Y. Ye, L. Dai, X. N. Wen, P. C. Wu, R. M. Peng and G. G. Qin, “High-performance single CdS nanobelt metal-semiconductro field-effect transistor-based photodetectors”, ACS Applied Materials & Interfaces 2, 2724 (2010).

  • C. Liu L. Dai, Y. Ye, T. Sun, R. M. Peng, X. N. Wen, P. C. Wu and G. G. Qin, “High-efficiency color tunable n-CdSxSe1-x/p+-Si parallel-nanobelts heterojunction light-emitting diodes”, Journal of Materials Chemistry 20, 5011 (2010).

  • P. C. Wu, Y. Dai, Y. Ye, X. L. Fang, T. Sun, C. Liu and L. Dai, “High-performance non-volatile CdS nanobelt-based floating nanodot gate memory”, Journal of Materials Chemistry 20, 4404 (2010).

  • L. Li, P. C. Wu, X. Fang, T. Zhai, L. Dai, M. Liao, Y. Koide, H. Wang, Y. Bando and D. Golberg, “Single-crystalline CdS nanobelts for excellent field-emitters and ultrahigh quantum-efficiency photodetectors”, Advanced Materials 22, 3161 (2010).

  • Y. Ye, Y. Dai, L. Dai, Z. Shi, N. Liu, F. Wang, L. Fu, R. Peng, X. Wen, Z. Chen, Z. Liu, and G. G. Qin, "High-performance Single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes", ACS applied materials & interfaces 2, 3406 (2010).

  • T. Sun, Z. L. Wang, Z.J. Shi, G.Z. Ran, W.J. Xu, Z.Y. P. Wang, Y.Z. Li, L. Dai, G.G. G. Qin. "Multilayered Graphene Used as Anode of Organic Light Emitting Devices". Appl. Phys. Lett. 96, 133301 (2010).

  • G. Z. Ran, GZ,  D. F. Jiang, Q. Kan, H. D. Chen, "Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices", APPLIED PHYSICS LETTERS 97, 233304 (2010)

  • T. Hong, G. Z. Ran, T. Chen, J. Q. Pan, W. X. Chen, Y. P. Wang, Y. B. Cheng, S. Liang, L. J. Zhao, L. Q. Yin, J. H. Zhang, W. Wang, G. G. Qin, "A Selective-Area Metal Bonding InGaAsP-Si Laser", Ieee Photonics Technology Letters 22, 1141 (2010).

  • Y. Z. Li, Z. L. Wang, H. Luo, Y. Z. Wang, W. J. Xu, G. Z. Ran, G. G. Qin, W. Q. Zhao, H. Liu, "Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide polycrystalline p-Si composite anode", Optics Express 18, 15942 (2010).

  • F. Wei, Y. Z. Li, G. Z. Ran, G. G. Qin, "1.54 mu m electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)(3)phen as emitter and Bphen as electron transport material", Optics Express 18, 13542 (2010).

  • T. Hong, T. Chen, G. Z. Ran, J. Wen, Y. Z. Li, T. Dai, G. G. Qin, "Enhanced electroluminescence from nanoscale silicon p(+)-n junctions made with an anodic aluminum oxide pattern", Nanotechnology 21 (2010).

2009

  • T. Chen, T. Hong, J. Q. Pan, W. X. Chen, Y. B. Cheng, Y. Wang, X. B. Ma, W. L. Liu, L. J. Zhao, G. Z. Ran, W. Wang, G.G. Qin, “Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding”,Chinese Phys. Lett. 26, 064211, (2009).

  • C. Liu, P. C. Wu, T. Sun, L. Dai, Y. Ye, R. M. Ma and G. G. Qin, “Synthesis of high quality n-type CdSe nanobelts and their application in nanodevices”, J. Phys. Chem. C. 113, 14478, (2009).

  • Y. Ye, L. Dai, P. C. Wu, C. Liu, T. Sun, R. M. Ma and G. G. Qin, “Schottky junction photovoltaic devices based on CdS single nanobelts”, Nanotechnology 20, 375202 (2009).

  • Y. Z. Li, W. J. Xu, G. Z. Ran, G. G. Qin, "Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror", Applied Physics Letters 95 (2009).

  • R. Oulton, V. Sorger, T. Zentgraf, R. M. Ma, C. Gladden, L. Dai, G. Bartal and X. Zhang, "Plasmon lasers at deep subwavelength scale", Nature 461, 629 (2009).

  • P. C. Wu, Y. Ye, T. Sun, Ruoming Peng, X. Wen, Wanjin Xu, Cui Liu, and L. Dai, "Ultrahigh-Performance Inverters Based on CdS Nanobelts", ACS Nano 3, 3138 (2009).

  • P. C. Wu, Y. Ye, C. Liu, R. M. Ma, T. Sun and L. Dai, "Logic gates constructed on CdS nanobelt field-effect transistors with high-k HfO2 top-gate dielectrics", J. Mater. Chem. 19, 7296 (2009).

  • R. M. Ma, X. L. Wei, L. Dai, S. F. Liu, T. Chen, S. Yue, Z. Li, Q. Chen, and G. G. Qin, "Light Coupling and Modulation in Coupled Nanowire Ring-Fabry-Pe´rot Cavity", Nano Letters 9, 2697 (2009).

  • P. C. Wu, R. M. Ma, C. Liu, T. Sun, Y. Ye and L. Dai, "High-performance CdS nanobelt field-effect transistors with high-k HfO2 top-gate dielectrics", J. Mater. Chem. 19, 2125 (2009).

2008

  • C. Liu, , L. Dai, R. M. Ma, W. Q. Yang and G. G. Qin, “P-Zn3P2 Single nanowire metal-semiconductor field-effect transistor”, Journal of Applied Physics 104, 034302 (2008).

  • W. Q. Yang, , L. Dai, L. P. You and G. G. Qin, “Color tuning of photoluminescence from ZnS nanobelts synthesized with Cu and Mn doping and without intentionally doping”, Physics Letts A 372, 4831 (2008).

  • R. M. Ma, L. Dai, C. Liu, W. J. Xu, G. G. Qin, "High-Performance Nanowire Complementary Metal-Semiconductor Inverters", Appl. Phys. Lett. 93, 053105 (2008).

  • W. Q. Yang, L. Dai, R. M. Ma, C. Liu, T. Sun, and G. G. Qin,"Back-gate ZnO nanowire field-effect transistors each with a top W shaped Au contact", Appl. Phys. Lett. 93, 033102 (2008).

  • C. Liu, L. Dai, L. P. You, W. J. Xu, R. M. Ma, W. Q. Yang, Y. F.  Zhang, and G. G. Qin, "Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs", J. Mater. Chem. 18, 3912 (2008).

  • C. Liu, L. Dai, L. P. You, W. J. Xu, and G. G. Qin, "Blueshift electroluminescence from single n-InP nanowire/p-Si heterojunctions due to Burstein-Moss effect", nanotechnology 19, 465203 (2008).

  • K. Sun, W.J. Xu, B. Zhang, L.P. You, G.Z. Ran and G.G. G. Qin. "Strong Enhancement of Er3+1.54 mm Electroluminescence through Amorphous Si Nanoparticles", Nanotechnology 19, 105708(2008). 

  • W. Q. Zhao, G. Z. Ran, Z. W. Liu, Z. Q. Bian, K. Sun, W. J. Xu, C. H. Huang, G. G. Qin, "Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence", Optics Express 16, 5158 (2008).

  • W. Q. Zhao, G. Z. Ran, W. J. Xu, G. G. Qin, "Passivated p-type silicon: Hole injection tunable anode material for organic light emission", Applied Physics Letters 92, 073303 (2008).

2007

  • R. M. Ma, L. Dai, H. B. Huo, W. J. Xu, and G. G. Qin, "High-Performance Logic Circuits Constructed  on Single CdS Nanowires", Nano Letters 7, 3300 (2007).

  • R. M. Ma, L. Dai, and G. G. Qin, "High-Performance Nano-Schottky Diodes and Nano-MESFETs Made on Single CdS Nanobelts", Nano Letters 7, 868 (2007).

  • H. B. Huo, C. Liu, L. Dai, L. P. You, W. Q. Yang, R. M. Ma, Y. F. Zhang and G. G. Qin, “A method to identify shallow dopants in semiconductor nanowires”, Applied Physcs Letters 91, 181117 (2007).

  • R. M. Ma, , L. Dai and G. G. Qin, “Enhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires”, Applied Physics Letters 90, 093109 (2007).

  • R. M. Ma, X. L. Wei, , L. Dai, H. B. Huo and G. G. Qin, “Synthesis of CdS nanowire networks and their optical and electrical properties”, Nanotechnology 18, 205605 (2007).

  • Y. F. Zhang, L. P. You, X. D. Shan, X. L. Wei H. B. Huo, X. J. Xu and , L. Dai, “Growth, optical, and electrical properties of single-crystalline Si-CdSe biaxial p-n heterosturcture nanowires”, Journal of Physics Chemistry C 111, 14343 (2007).

  • L. Xie, C. Liu, J. Zhang, Y. Zhang, L. Jiao, L. Jiang, , L. Dai and Z. Liu, “Photoluminescence recovery from single-walled carbon nanotubes on substrates”, J. Am. Chem. Soc. 129, 12382 (2007).

2006

  • H. B. Huo, L. Dai, C. Liu, L. P. You, W. Q. Yang, R. M. Ma, G. Z. Ran and G. G. Qin, “Electrical properties of Cu doped p-ZnTe nanowires”, Nanotechnology 17, 5912 (2006).

  • R. M. Ma, L. Dai, H. B. Huo, W. Q. Yang, G. G. Qin, P. H. Tan, C. H. Huang and J. Zheng, “Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices”, Applied Physics Letters 89, 203120 (2006).

  • H. B. Huo, , L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang and G. G. Qin, “Synthesis and optical of ZnTe single-crystalline nanowires”, Journal of nanoscience and nanotechnology 6, 1182 (2006).

  • D. Xia, L. Dai, W. Xu, L. You, B. Zhang, G. Ran and G. G. Qin, “Synthesis and PL properties of ZnSe nanowires with Zincblende and Wurtzite structures”, Chinese Physics Lett 23, 1317 (2006).

  • W. Q. Yang, L. Dai, L. P. You, B. R. Zhang, B. Shen and G. G. Qin, “Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN and Al0.25Ga0.75N substrates”, Journal of nanoscience and nanotechnology 6, 3780 (2006).

  • W. Q. Yang, H. B. Huo, L. Dai, R. M. Ma, S. F. Liu, G. Z. Ran, B. Shen, C. L. Lin and G. G. Qin, “Electrical transport and electroluminescence properties of n-ZnO single nanowires”, Nanotechnology 17, 4868 (2006).