Research Interests: Our research interests are in two-dimensional materials, and related electronic, photonic and optoelectronic devices. For example, the single atomic crystal layer of transition metal dichalcogenides (TMDCs), with numerous exotic physical properties, has become a worthy successor to graphene. The two-dimensional insulator, semicondutor, semi-metal, superconduction, charge-density-wave and ferromagnetism materials have been discovered. The van der Waals heterosturctures with different two-dimensional matials will create exotic physical properties, not exsiting in single two-dimensional materials. We are studying on novel physical phenomena emerging in atomically-thin materials, van der Waals heterostructures and surface/interfaces by nanoscale device designs, optical spectroscopy, electrical transport, and scanning photocurrent measurements.

Current projects:

1.Electrical engineering of 2D materials: Next-generation calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. As the transistor's channel thickness becomes greater than the channel's length, ultimately leads to difficult electrostatic control via the transistor gate. Two-dimensional gapless graphene and semiconducting transition metal dichalcogenides have emerged as promising electronic materials due to their atomic thickness, chemical stability and scalability. The electrical engineering of 2D materials is crucial in 2D electronic circuitry and computing. (see more details)

2.Photonic devices of 2D materials: Our group is devoted to studying the fundamental physics and application using the optical properties of two-dimensional atomic crystals, such as transition metal dichalcogenides. Due to the emerging physical properties and electronic structure when such crystals are thinned down to a single layer, optical method may elucidate incite into these transitions and uncover the unique two-dimensional physics in many of these crystals. (see more details)

3.Valleytronics of 2D materials: Atomic membrances of transition metal dichlcogenides were found to possess a nonequivalent carrier distribution in crystal momentum valley space, allowing the valley index of electrons to form a new degree of freedom for information processing. The valleytronic devices have the potential to improve high-speed data communications and low-power electronics in a transformative way. We aim at advancing novel valleytronic/valley-optoelectronic devices based on electrical generation and control valley degree of freedom of atomically thin transition metal dichalcogenide crystals and exploiting the unique interplay between light, exciton, valley and spin in two-dimensional transition metal dichalcogenide materials. (see more details)

4.van der Waals 2D heterostructures: The discovery of atomically thin 2D materials enables a rich variety of new van der Waals heterostructures, where different 2D crystals can be stacked together. The individual layers can be semiconductor, insulator, metal, charge-density-wave, or superconductors. These new van der Waals heterostructures offer tremendous new opportunities for fundamental studies.

  • Address: West 333, School of Physics, Peking University, Beijing 100871
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  • Phone: (86)10-62756453