Research Interest

Explore new physics and new functionality of low dimensional electronic materials by controllably tuning disorders, functional groups and their interactions with the charge and spin carriers of the materials while probing their electronic transport properties in-situ. A wide range of materials, including but not limited to, graphene, topological insulator thin films and ultra thin transition metal dichalcogenides, are suitable for such in-situ manipulation and electronic transport studies.

2D Dirac Semimetal: Graphene

2D semiconductors and semimetals: Transition Metal Dichalcogenides, Black Phosphors

Ultra-thin Weyl Semimetal: TaP, TaAs

Main Experimental Apparatus

Device Fabrication  

  • E-beam Lithography System

    FEI nanolab + Nabity NPGS system, Room 203, East Physics Building.

  • Thermal and E-beam Evaporator

    Room 202, East Physics Building.

  • UHV Thermal and E-beam Evaporator

    Room 407, East Physics Building.  
     

  • Mask Aligner

    Room 202, East Physics Building.  
     

  • ME-3A Reactive Ion Etching

    Room 202, East Physics Building.

  • Glove Box

    Room 407, East Physics Building.  
     


  

  • 9T In-situ Transport Measurement System

    Room 407, East Physics Building.

  • PPMS

    Room 403, East Physics Building. In collaboration with Prof. Jing Shi and Prof Wei Han.

  • PPMS

    Room B264, West Physics Building.

     

     

  • Bruker AFM

    Room 202, East Physics Building.  

  • Probe Station

    Room 407, East Physics Building.

  • MPMS

    Room B264, West Physics Building.

Instrumentation Plan

The twin systems for true UHV magneto-electrical transport measurement    

SYSTEM 1: fast turnaround, high through-put. (project completed, see Main Experimental Apparatus)
SPECS: sample in UHV; temperature range from 4K to 450K; magnetic field of up to 9T, with tunable samplemagnetic field angle; multiple in-situ surface (bulk) manipulation schemes on electrically addressed samples from 4K to 450K.
SUBSYSTEM: Vibration-damped closed-cycle variable temperature sample probe (UHV compatible)

SYSTEM 2: low T, high stability, large magnetic field
SPECS: sample in UHV; temperature range from 0.3K to 450K; magnetic field of up to 14T, with tunable samplemagnetic field angle; multiple in-situ surface (bulk) manipulation schemes on electrically addressed samples from 4K to 450K.