Publications

Books and Patents

 

• Invited book chapter in "2D Materials: Properties and Devices", Cambridge University Press, ISBN-13: 978-1107163713.

 

• Patents: 一种超高真空兼容的热辐射屏蔽装置及其屏蔽方法（发明）。Applicants: Jian-hao Chen, Shan Wang, Jing Liu. 发明专利授权号: 2020102850542。

 

• Patents: 一种超高真空低温样品台连接锁及其控制方法（发明）。Applicants: Jian-hao Chen, Shimin Cao, Jing Liu. 发明专利授权号: 202010222879X。

 

• Patents: 一种超高真空兼容的低温强磁场输运装置（发明 & 实用新型）。Applicants: Jian-hao Chen, Chaoyi Cai, Shimin Cao, Chuanwu Cao. 实用新型申请号: 2017213057435。发明专利申请号: 2017109412208。

 

• Patent: 一种超高真空环境的多自由度样品传递装置。Applicants: Jian-hao Chen, Chaoyi Cai, Shimin Cao, Chuanwu Cao, Fangzhun Guo. 发明专利申请号：201710463009X。

• Patent: 一种低震动超高真空低温物性测量装置。Applicants: Jian-hao Chen, Shimin Cao, Chaoyi Cai, Long He. 发明专利申请号: 2017108173962。

 

• Patent: 一种超高真空低温样品台。Applicants: Jian-hao Chen, Shimin Cao, Chaoyi Cai. 发明专利申请号: 2017108339991。

                           

Research Articles

• Shaomian Qi#, Di Chen#, Kangyao Chen , Jianqiao Liu, Guangyi Chen, Bingcheng Luo, Hang Cui, Linhao Jia, Jiankun Li, Miaoling Huang, Yuanjun Song, Shiyi Han, Lianming Tong, Peng Yu, Yi Liu, Hongyu Wu, Shiwei Wu, Jiang Xiao, Ryuichi Shindou, X. C. Xie and Jian-Hao Chen*, Giant electrically tunable magnon transport anisotropy in a van der Waals antiferromagnetic insulator, Nature Communications, 14, 2526(2023),  DOI:10.1038/s41467-023-38172-7

  
  

• Shimin Cao^#, Mantang Chen^#, Jiang Zeng, Ning Ma, Runjie Zheng, Ya Feng, Shili Yan, Jing Liu, Kenji Watanabe,Takashi Taniguchi, X C Xie and Jian-Hao Chen*, Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate, 2D Materials, 10, 025016(2023).pdf  DOI:10.1088/2053-1583/acbdaa

• Xinjian Wei^#, Congkuan Tian^#, Hang Cui, Yongkai Li, Shaobo Liu, Ya Feng, Jian Cui, Yuanjun Song, Zhiwei Wang and  Jian-Hao Chen*,  Linear nonsaturating magnetoresistance in kagome superconductor CsV₃Sb₅ thin flakes , 2D Materials, 10, 015010(2023).pdf  DOI: 10.1088/2053-1583/ac9f55

• Guangyi Chen^#, Shaomian Qi^#, Jianqiao Liu, Di Chen, Jiongjie Wang, Shili Yan, Yu Zhang, Shimin Cao, Ming Lu, Shibing Tian, Kangyao Chen, Peng Yu, Zheng Liu, X. C. Xie, Jiang Xiao, Ryuichi Shindou, Jian-Hao Chen*, Electrically Switchable van der Walls Magnon Valves, Nature Communications,  12，6279(2021).pdf  DOI: 10.1038/s41467-021-26523-1

   

• Di Chen, Jiankun Li, Zheng Wei, Xinjian Wei, Maguang Zhu, Jing Liu, Guangyu Zhang, Zhiyong Zhang, Jian-Hao Chen*,  “Repairable Polymer Solid Electrolyte Gated MoS₂ Field Effect Devices with Large Radiation Tolerance”,  Advanced Electronic Materials, 2100619 (2021).  pdf

 

• Zhijian Xie, Xinjian Wei, Xiaobin Qiang, Yu Zhang, Shili Yan, Shimin Cao, Congkuan Tian, Peipei Wang, Liyuan Zhang, G. D. Gu, Haizhou Lu, Jian-Hao Chen*, “Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe₅, Physical Review B 104, 125439 (2021). pdf

   

• Shimin Cao, Chuanwu Cao, Shibing Tian, Jian-Hao Chen*, “Enhancement of spin-orbit coupling and magnetic scattering in hydrogenated graphene”, Physical Review B 104, 125422 (2021) .pdf

   

• Guangyi Chen, Yu Zhang, Shaomian Qi, Jian-Hao Chen*,  “Gate-controlled magnetic transitions in Fe₃GeTe₂ with lithium ion conducting glass substrate” , Chinese Physics B 30, 097504 (2021) .pdf

 

• Zhijian Xie, Xinjian Wei, Shimin Cao, Yu Zhang, Shili Yan, G.D. Gu, Qiang Li, Jian-Hao Chen*, “Electron-electron interactions and weak antilocalization in few-layer ZrTe₅ devices”,  Physical Review B 103, 155408 (2021).pdf

 

• Zhongxu Wei^#, Qian Li^#, Ben-Chao Gong^#, Xinjian Wei^#, Wei Hu, Zhuang Ni, Ge He, Mingyang Qin, Anna Kusmartseva, Fedor V. Kusmartsev, Jie Yuan, Beiyi Zhu, Qihong Chen, Jian-Hao Chen, Kai Liu, and Kui Jin*, “Two superconductor-insulator phase transitions in the spinel oxide Li1±xTi2O4−δ induced by ionic liquid gating”,  Phys. Rev. B 103, L140501 (2021).pdf

 

• Junchao Ma, Rodrigo Muniz, Shaomian Qi, Jiawei Lai, Kenan Zhang, Yinan Liu, Xiao Zhuo, Shuxia Chen, Jian-Hao Chen, Shuyun Zhou, Dong Sun*, “Circular photogalvanic effect from third-order effect in 1T'-MoTe₂” , 2D Materials 8, 025016 (2021).pdf

 

• Shimin Cao, Chuanwu Cao, Shibing Tian and Jian-Hao Chen*, Evidence of tunable magnetic coupling in hydrogenated graphene, Physical Review B 102, 045402(2020).pdf

 

• Shimin Cao, Wenlong Ma, Gan Zhai, Zhijian Xie, Xueshi Gao, Yan Zhao, Xiumei Ma, Lianming Tong, Shuang Jia and Jian-Hao Chen*, Anisotropic Raman spectrum and transport properties of AuTe₂Br flakes, J. Phys.: Condens. Matter 32 12LT01 (2020).pdf

 

• Jiawei Lai, Junchao Ma, Yinan Liu, Kenan Zhang, Xiao Zhuo, Jian-Hao Chen, Shunyun Zhou and Dong Sun*, photocurrent response of type-II dirac semimetal PtTe2, 2D Materials 7,(2020).pdf

 

• Seunguk Song, Yeoseon Sim, Se-Yang Kim, Jung Hwa Kim, Inseon Oh, Woongki Na, Do Hee Lee, Jaewon Wang, Shili Yan, Yinan Liu, Jinsung Kwak, Jian-Hao Chen, Hyeonsik Cheong, Jung-Woo Yoo, Zonghoon Lee & Soon-Yong Kwon, Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit, Nature Electronics 3, 207-215(2020).pdf

 

• Zongwei Ma, Wang Zhu, Gaoting Lin, Yinan Liu, Feng Jin, Yang Yang, Tong Wu, Xuan Luo, Yuping Sun,  Jianhao Chen, Yan Sun, Chun Zhou and Zhigao Sheng*, Micro-MOKE with optical interference in the study of 2D Cr2Ge2Te6 nanoflake based magnetic heterostructures, AIP Advances 9, 125116 (2019).pdf

 

• Yan, Shili; Huang, Hai; Xie, Zhijian; Ye, Guojun; Li, XiaoXi; Taniguchi, Takashi; Watanabe, Kenji; Han, Zheng; Chen, Xianhui*; Wang, Jianlu*; Chen, Jian-Hao*, Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field Effect Transistors with van der Waals Buffer, ACS Appl. Mater. Interfaces 11, 42358−42364 (2019).pdf

 

• Chuanwu Cao and Jian-Hao Chen*, Quantum Spin Hall Materials, Advanced Quantum Technologies. 201900026 (2019). pdf

• Back Cover of “Adv. Quantum Technol. 10/2019”.

• Media report by ASNChina:“Wiley Advanced Science News”.

 

• Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang*, Huaihong Guo, Chengbing Qin*, Liantuan Xiao, Jing Zhang, Jianhao Chen*, Zheng Han* & Zhidong Zhang, Gate tunable giant anisotropic resistance in ultra-thin GaTe, Nature Communications. 10 2302 (2019). pdf

 

• Junchao Ma, Qiangqiang Gu, Yinan Liu, Jiawei Lai , Peng Yu, Xiao Zhuo, Zheng Liu , Jian-Hao Chen*, Ji Feng* and Dong Sun*, Nonlinear photoresponse of type-II Weyl semimetals, Nature Materials.(2018).pdf

• Media report by PKU: “《自然·材料》封面文章报道量子材料科学中心孙栋课题组及合作者拓扑光电探测方面的研究成果”.

 

• Chuanwu Cao, Xin Liu, Xiao Ren, Xianzhe Zeng, Kenan Zhang, Dong Sun, Shuyun Zhou, Yang Wu, Yuan Li and Jian-Hao Chen*, Barkhausen effect in the first order structural phase transition in type-II Weyl semimetal MoTe₂, 2D Materials. 5 044003 (2018). pdf

 

• Rongjie Zhang, Zhijian Xie, Chunhua An, Shuangqing Fan, Qiankun Zhang, Sen Wu, Linyan Xu, Xiaodong Hu, Daihua Zhang, Dong Sun, Jian-Hao Chen, and Jing Liu*, Ultraviolet Light-Induced Persistent and Degenerated Doping in MoS2 for Potential Photocontrollable Electronics Applications, ACS Appl. Mater. Interfaces, 2018, 10(33), pp 27840–27849. pdf

 

• Chaoyi Cai, Jian‐Hao Chen*, The electronic transport properties of Co cluster decorated graphene, Chinese Physics B 27(6), 067304. pdf

• Media report by Physics Wolrd @IOP: “In situ measurements reveal cobalt-decorated graphene behavior”.

 

• Jiawei Lai, Xin Liu, Junchao Ma, Qinsheng Wang, Kenan Zhang, Xiao Ren, Yinan Liu, Qiangqiang Gu, Xiao Zhuo, Wei Lu, Yang Wu, Yuan Li, Ji Feng, Shuyun Zhou, Jian‐Hao Chen* and Dong Sun*, Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe₂, Adv.Mater. 30(22)1707152 (2018). pdf

 

• Jiawei Lai, Yinan Liu, Junchao Ma, Xiao Zhuo, Yu Peng, Wei Lu, Zheng Liu, Jianhao Chen*, and Dong Sun*, Broadband Anisotropic Photoresponse of the “Hydrogen Atom” Version Type-II Weyl Semimetal Candidate TaIrTe₄, ACS Nano 12, 4, 4055-4061 (2018). pdf

 

• Yinan Liu, Qiangqiang Gu, Yu Peng, Shaomian Qi, Na Zhang, Yinong Zhang, Xiumei Ma, Rui Zhu, Lianming Tong, Ji Feng*, Zheng Liu* and Jian-Hao Chen*, Raman Signatures of Broken Inversion Symmetry and In-plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe₄, Adv.Mater. 30(25), 1706402 (2018). pdf

 

• Qiankun Zhang, Yinan Liu, Jiawei Lai, Shaomian Qi, Chunhua An, Yao Lu, Xuexin Duan, Wei Pang, Daihua Zhang, Dong Sun, Jian-hao Chen* and Jing Liu*, Liquid phase mass production of air-stable black phosphorus/phospholipids nanocomposite with ultralow tunneling barrier, 2D Materials. 5 025012 (2018). pdf

 

• Xiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Liu, Mao-Lin Chen, Xin Liu, Chuan-Kun Jia, Dong-Ming Sun*, Xiang-Wei Jiang*, Zheng Han*, Vincent Bouchiat, Jun-Jie Guo, Jian-Hao Chen & Zhi-Dong Zhang, Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS₂ transistor, Nature Communications 8, 970 (2017). pdf

 

• Shi-Li Yan, Zhi-Jian Xie, Jian-Hao Chen*, Takashi Taniguchi, Kenji Watanabe , Electrically tunable energy band gap in dual-gated ultra-thin black phosphorus field effect transistors, Chinese Physics Letters, 34,4, 047304 (2017). pdf

 

• Xin Liu*, Zhiran Zhang, Chaoyi Cai, Shibing Tian, Hong Lu, Takashi Taniguchi, Kenji Watanabe, Shuang Jia*, Jian-Hao Chen*,Gate Tunable Magneto-resistance of Ultra-Thin WTe₂ Devices, 2D Materials 4, 021018 (2017). pdf

                           

• Shibing Tian, Pengjie Wang, Xin Liu, Junbo Zhu, Hailong Fu, Takashi Taniguchi, Kenji Watanabe, Jian-Hao Chen* and Xi Lin*, Nonlinear transport of graphene in the quantum Hall regime, 2D Materials 4, 015003 (2016).pdf

 

• F.P. Zheng, C.Y. Cai, S.F. Ge, X.F. Zhang, X. Liu, H. Lu, Y.D. Zhang, J. Qiu, T. Taniguchi, K. Watanabe, S. Jia, J.S. Qi, J. H. Chen*, D. Sun* and J. Feng*, On the quantum spin Hall gap of monolayer 1T'-WTe₂, Advanced Materials 28 (24), 4845-4851 (2016).pdf

                               

• J. -H. Chen, G. Autès, N. Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie and A. Zettl, Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering, Physical Review B 89, 121407(R) (2014).pdf

 

• Peter Bai, Joseph Kao, Jian-Hao Chen, William Mickelson, Alex Zettl, Ting Xu,Nanostructures on Graphene using Supramolecule and Supramolecular Nanocomposites, Nanoscale 6, 4503 (2014).pdf

                               

• A. Gibb, N. Alem, J.-H. Chen, K. Erickson, J. Ciston, A. Gautam, M. Linck, A. Zettl,Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition- Grown Hexagonal Boron Nitride, Journal of the American Chemical Society 135, 6758(2013).pdf

 

• J. -H. Chen, W. G. Cullen, E. D. Williams, M. S. Fuhrer,Tunable Kondo Effect in Graphene with Defects, Nature Physics 7, 535(2011).                  pdf

 

• W. G. Cullen, M. Yamamoto, K. M. Burson, J. -H. Chen, C. Jang, L. Li, M. S. Fuhrer, E. D. Williams,High-fidelity conformation of graphene to SiO₂ topographic features, Physical Review Letters 105,215504 (2010).pdf

 

• J. Katoch, J. -H. Chen, R. Tsuchikawa, C. W. Smith, E. R. Mucciolo, and M. Ishigami,Uncovering the Dominant Scatterer in Graphene Sheets on SiO₂, Physical Review B 82, 081417(R) (2010) (Editor’s Suggestion).pdf

 

• S. Xiao, J. -H. Chen, S. Adams, E. D. Williams, M. S. Fuhrer,Charged Impurity Scattering in Bilayer Graphene, Physical Review B 82, 041406(R) (2010).pdf

 

• J. -H. Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams,Defect Scattering in Graphene, Physical Review Letters 102, 236805 (2009).                 pdf

 

• C. Jang, S. Adam, J. -H. Chen, E. D. Williams, S. Das Sarma, M. S. Fuhrer,Tuning the Effective Fine Structure Constant in Graphene, Physical Review Letters 101, 146805 (2008).                 pdf

 

• J. -H. Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer,Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO₂, Nature Nanotechnology 3, 206 (2008).                 pdf

• “Graphene could be the new silicon”, Scientific American News Blog, March 31, 2008.

• “Is Graphene the new silicon?”, NSF Press Release 08-048, March 27, 2008.

• “Carbon could enable fastest chips”, by Colin Johnson, EE Times, March 25, 2008.

 

• J. -H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, M. Ishigami,Charged Impurity Scattering in Graphene, Nature Physics 4, 377 (2008).                 pdf

 

• J. -H. Chen, M. Ishigami, C. Jang, D. R. Hines, M. S. Fuhrer, E. D. Williams,Printed Graphene Circuits, Advanced Materials 19, 3623 (2007).pdf

 

• M. Ishigami, J. -H. Chen, W. G. Cullen, M. S. Fuhrer, E. D. Williams,Atomic Structure of Graphene on SiO₂, Nano Letters 7, 1643 (2007)                 .pdf

• “Clean Up on Graphene”, Editor's Choice, Science 316, 1543, June 15, 2007.

• “Graphene: What lies beneath”, Research Highlights, Nature Nanotechnology, May 25, 2007.

 

• M. Ishigami, J. -H. Chen, E. D. Williams, D. Tobias, Y. F. Chen, M. S. Fuhrer,Hooge’s Constant for Carbon Nanotube FETs, Applied Physics Letters 88, 203116 (2006).pdf